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BD439/441
BD439/441
Medium Power Linear and Switching Applications
* Complement to BD440, BD442 respectively
1
TO-126 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD439 : BD441 VCES Collector-Emitter Voltage : BD439 : BD441 Collector-Emitter Voltage : BD439 : BD441 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
1. Emitter
Value 60 80 60 80 60 80 5 4 7 1 36 150 - 65 ~ 150
Units V V V V V V V A A A W C C
VCEO
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD439 : BD441 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 1.5 20 15 40 40 25 15 130 130 140 140 Min. 60 80 100 100 100 100 1 Typ. Max. Units V V A A A A mA
ICBO ICES IEBO hFE
VCE(sat) VBE(on) fT
* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product
0.8
V V V MHz
* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD439/441
Typical Characteristics
1000
1
100
VCE(sat)[V], SATURATION VOLTAGE
VCE = 1V
IC = 10 IB
hFE, DC CURRENT GAIN
0.1
10
1 0.01
0.1
1
10
0.01 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
5.0
1000
VCE = 1V
4.5
IC[A], COLLECTOR CURRENT
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0
CCBO(pF), COLLECTOR BASE CAPACITANCE
100
10
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
1 0.1
1
10
100
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
48
42
IC[A], COLLECTOR CURRENT
IC MAX. (Pulsed)
10 ms 1m DC s
10
1s
PC[W], POWER DISSIPATION
10
36
IC Max. (Continuous)
0
s
10s
30
24
1
18
12
0.1 1 10
BD439 BD441
100
6
0 0 25 50
o
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD439/441
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H2

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